ti.\*:("Modelling in crystal growth")
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Modelling in crystal growthDUPRET, F; DERBY, J. J; KAKIMOTO, K et al.Journal of crystal growth. 1997, Vol 180, Num 3-4, issn 0022-0248, 407 p.Conference Proceedings
Modelling of crystal growth during rapid solidificationJOÊNSSON, B.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 1991, Vol 133, pp 827-831, issn 0921-5093, 5 p.Conference Paper
AN APPROACH TO THE TOPOLOGICAL MODELLING OF CRYSTAL GROWTHBONCHEV D; MEKENYAN O; FRITSCHE H et al.1980; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1980; VOL. 49; NO 1; PP. 90-96; BIBL. 33 REF.Article
Mathematical modeling of grown-in defects formation in Czochralski siliconKOBAYASHI, S.Journal of crystal growth. 1997, Vol 180, Num 3-4, pp 334-342, issn 0022-0248Conference Paper
Modelling of crystal growth kinetics : a simple but illustrative approachDE GOEDE, R; VAN ROSMALEN, G. M.Journal of crystal growth. 1990, Vol 104, Num 2, pp 392-398, issn 0022-0248Article
Detailed modeling of three-dimensional chemical vapor depositionERN, A; GIOVANGIGLI, V; SMOOKE, M. D et al.Journal of crystal growth. 1997, Vol 180, Num 3-4, pp 670-679, issn 0022-0248Conference Paper
Measurement, modelling and simulation of defects in as-grown Czochralski siliconVANHELLEMONT, J; SENKADER, S; KISSINGER, G et al.Journal of crystal growth. 1997, Vol 180, Num 3-4, pp 353-362, issn 0022-0248Conference Paper
Time-dependent simulation of Czochralski silicon crystal growthJÄRVINEN, J; NIEMINEN, R; TIIHONEN, T et al.Journal of crystal growth. 1997, Vol 180, Num 3-4, pp 468-476, issn 0022-0248Conference Paper
Theoretical model of crystal growth shaping processTATARCHENKO, V. A; USPENSKI, V. S; TATARCHENKO, E. V et al.Journal of crystal growth. 1997, Vol 180, Num 3-4, pp 615-626, issn 0022-0248Conference Paper
Vibrational control of crystal growth from liquid phaseLYUBIMOV, D. V; LYUBIMOVA, T. P; MERADJI, S et al.Journal of crystal growth. 1997, Vol 180, Num 3-4, pp 648-659, issn 0022-0248Conference Paper
Modelling sucrose crystal growth = Modélisation de la croissance des cristaux de saccharoseHEFFELS, S. K; DE JONG, E. J.Zuckerindustrie. 1988, Vol 113, Num 9, pp 781-786, issn 0344-8657Article
Use of an inhomogeneous magnetic field for silicon crystal growthKAKIMOTO, K; EGUCHI, M; OZOE, H et al.Journal of crystal growth. 1997, Vol 180, Num 3-4, pp 442-449, issn 0022-0248Conference Paper
A review of measurement of thermophysical properties of silicon meltKIMURA, S; TERASHIMA, K.Journal of crystal growth. 1997, Vol 180, Num 3-4, pp 323-333, issn 0022-0248Conference Paper
Bifurcation analysis of the thermocapillary convection in cylindrical liquid bridgesCHEN, G; LIZEE, A; ROUX, B et al.Journal of crystal growth. 1997, Vol 180, Num 3-4, pp 638-647, issn 0022-0248Conference Paper
Micro/macro modeling of CVD synthesisIMAISHI, N; SATO, T; KIMURA, M et al.Journal of crystal growth. 1997, Vol 180, Num 3-4, pp 680-690, issn 0022-0248Conference Paper
Mathematical modelling of crystal growth processes in gelCIPANOV, A. V; GOSHKA, L. L; KOLOSOV, S. I et al.Crystal research and technology (1979). 1990, Vol 25, Num 2, pp 119-128, issn 0232-1300Article
Modeling of crystal growth during rapid solidificationJÖNSSON, B.Metallurgical transactions. A, Physical metallurgy and materials science. 1991, Vol 22, Num 10, pp 2475-2485, issn 0360-2133Article
I. Geometric models of crystal growthTAYLOR, J. E; CAHN, J. W; HANDWERKER, C. A et al.Acta metallurgica et materialia. 1992, Vol 40, Num 7, pp 1443-1474, issn 0956-7151Article
Some remarks on the stochastic model of crystal growthCHVOJ, Z.Czechoslovak journal of physics. 1984, Vol 34, Num 6, pp 548-553, issn 0011-4626Article
On the interface modelling of crystal growth processes. I: Thermostatic considerationsKOSINSKI, W; TABACOVA, S.Archives of Mechanics. 1994, Vol 46, Num 6, pp 839-854, issn 0373-2029Article
Heave of a railway bridge: modelling gypsum crystal growthRAMON, A; ALONSO, E. E.Geotechnique. 2013, Vol 63, Num 9, pp 720-732, issn 0016-8505, 13 p.Article
Analysis of InP LEC melt flows using a parallel adaptive finite element schemeGIVOLI, D; FLAHERTY, J. E; SHEPHARD, M. S et al.Journal of crystal growth. 1997, Vol 180, Num 3-4, pp 510-516, issn 0022-0248Conference Paper
Influence of boron concentration on the oxidation-induced stacking fault ring in Czochralski silicon crystalsDORNBERGER, E; GRÄF, D; SUHREN, M et al.Journal of crystal growth. 1997, Vol 180, Num 3-4, pp 343-352, issn 0022-0248Conference Paper
New approach to simulation of radiative-conductive heat transfer in semi-transparent crystals being pulled from a meltYUFEREV, V. S; VASIL'EV, M. G; EV et al.Journal of crystal growth. 1997, Vol 180, Num 3-4, pp 551-559, issn 0022-0248Conference Paper
Numerical and analytical modelling of the MHD buoyancy-driven flow in a Bridgman crystal growth configurationDAVOUST, L; MOREAU, R; COWLEY, M. D et al.Journal of crystal growth. 1997, Vol 180, Num 3-4, pp 422-432, issn 0022-0248Conference Paper